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BA282 ( pictured diodes slightly differ from actual BA282) Manufacturer - Vishay Semiconductors Low differential forward resistance BA282 V = 35 V rf @ I 3mA = max 0 7 W VR V, rf IF 0.7 BA282–TR Tape and Reel Parameter Test Conditions Type Symbol Value Unit Storage temperature range Tstg –55...+150 C Parameter Test Conditions Symbol Value Unit Junction ambient l=4 mm, TL=constant RthJA 350 K/W Parameter Test Conditions Type Symbol Min Typ Max Unit Forward voltage IF=100mA VF 1 V Reverse current VR=20 V IR 50 nA Diode capacitance f=100MHz, VR=3 V BA282 CD 1.25 pF f=100MHz, VR=3 V BA283 CD 1.2 pF Differential forward f=200MHz, IF=3mA BA283 rf 1.2 resistance f=200MHz, IF=10mA BA282 rf 0.5 f=200MHz, IF=10mA BA283 rf 0.9 Reverse impedance f=100MHz, VR=1 V zr 100 k (all content is the responsibility of the poster) |
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