The BUL213 is manufactured using high voltage Multi-epitaxial Mesa technology for cost-effective high performance. It uses a Hollow Emitter structure to enhance switching speeds. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. VCES Collector-Emitter Voltage (VBE = 0) 1300 V VCEO Collector-Emitter Voltage (IB = 0) 600 V VEBO Emitter-Base Voltage (IC = 0) 9 V ICM Collector Peak Current (tp < 5 ms) 6 A IBM Base Peak Current (tp < 5 ms) 4 A Ptot Total Dissipation at Tc = 25 oC 60 W Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC Link to datasheet: http:// /stonline/books/pdf/docs/1020.pdf (all content is the responsibility of the poster) |
luann.west@oklahomaselltoday.com (Luann West)
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