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55V Dual N-Channel HEXFET Power MOSFET in a SO-8 package Inverntory level as of feb 8,2008 = 31 Manufacture : International Rectifier Data Sheet: https://ec.irf.com/v6/en/US/adirect/ir?cmd=catProductDetailFrame&productID=IRF7341 Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. (all content is the responsibility of the poster) |
traci-terrell@oklahomaselltoday.com (Traci Terrell) for more information. All emails will be forwarded to the poster's actual email address.