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600V, SMPS Series N-Channel IGBTs The HGTG20N60A4 and HGTP20N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. optimized for high frequency switch mode power (all content is the responsibility of the poster) |
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