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Now over 1,000 items in our Store! INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE * UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode * Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 * IGBT co-packaged with HEXFRED ..... ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations * Industry standard TO-220AB package * Generation -4 IGBTs offer highest efficiencies available * IGBTs optimized for specific application conditions * HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing * Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs (all content is the responsibility of the poster) |
M_hogan@oklahomaselltoday.com (Maude Hogan) for more information. All emails will be forwarded to the poster's actual email address.