|
MBR150 Schottky Barrier Rectifier 1A 50V DO-41 The MBR150/160 series employs the Schottky Barrier principle in alarge area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes. •Low Stored Charge, Majority Carrier Conduction •Low Power Loss/High Efficiency •Highly Stable Oxide Passivated Junction •Weight: 0.4 Gram (Approximately) •Finish: All External Surfaces Corrosion Resistant and Terminal •Lead Temperature for Soldering. MyStoreMaps Counter: Merchandise Your Experience. Add One to Your Listings. (all content is the responsibility of the poster) |
dcampbell@oklahomaselltoday.com (Dave Campbell) for more information. All emails will be forwarded to the poster's actual email address.