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35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode NPT through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar ransistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. All trademarks are the property of their respective owners. (all content is the responsibility of the poster) |
t.edwards@oklahomaselltoday.com (Tracy Edwards) for more information. All emails will be forwarded to the poster's actual email address.